T. Kociniewski: search on Z-Library

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1

MOCVD doping technology for phosphorus incorporation in diamond: Influence of the growth temperature on the electrical properties

Kociniewski, T., Pinault, M.-A., Barjon, J., Jomard, F., Chevallier, J., Saguy, C.

Journal:

Diamond and Related Materials

Year:

2007

Language:

english

File:

PDF, 236 KB

english, 2007

2

Synthesis of strained SiGe on Si(100) by pulsed laser induced epitaxy

T. Kociniewski, F. Fossard, J. Boulmer, D. Bouchier

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 460 KB

english, 2010

3

Distributed electro-thermal model of IGBT chip – Application to top-metal ageing effects in short circuit conditions

Moussodji, J., Kociniewski, T., Khatir, Z.

Journal:

Microelectronics Reliability

Year:

2013

Language:

english

File:

PDF, 1.61 MB

english, 2013

4

The p-to-n-type conversion of boron-doped diamond layers by deuteration: New findings

Saguy, C., Kalish, R., Chevallier, J., Jomard, F., Cytermann, C., Philosoph, B., Kociniewski, T., Ballutaud, D., Baron, C., Deneuville, A.

Journal:

Diamond and Related Materials

Year:

2007

Language:

english

File:

PDF, 192 KB

english, 2007

5

Hydrogen incorporation, bonding and stability in nanocrystalline diamond films

Ballutaud, D., Kociniewski, T., Vigneron, J., Simon, N., Girard, H.

Journal:

Diamond and Related Materials

Year:

2008

Language:

english

File:

PDF, 921 KB

english, 2008

6

Corrigendum to “Excitonic recombinations and energy levels of highly boron doped homoepitaxial diamond films before and after hydrogenation” [Diamond Relat. Mater. 14 (2005) 350–354]

Baron, C., Wade, M., Deneuville, A., Bustarret, E., Kociniewski, T., Chevallier, J., Uzan-Saguy, C., Kalish, R., Butler, J.

Journal:

Diamond and Related Materials

Year:

2005

Language:

english

File:

PDF, 45 KB

english, 2005

7

Sp3/sp2 character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

Ballutaud, D., Jomard, F., Kociniewski, T., Rzepka, E., Girard, H., Saada, S.

Journal:

Diamond and Related Materials

Year:

2008

Language:

english

File:

PDF, 1.05 MB

english, 2008

8

Study of the passivation mechanisms of boron doped diamond using the Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy

Kociniewski, T., Remes, Z., Mer, C., Nesladek, M., Habka, N., Barjon, J., Jomard, F., Chevallier, J., Omnès, F., Tromson, D., Bergonzo, P.

Journal:

Diamond and Related Materials

Year:

2009

Language:

english

File:

PDF, 451 KB

english, 2009

9

μ-Raman spectroscopy for stress analysis in high power silicon devices

Kociniewski, T., Moussodji, J., Khatir, Z.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 1.30 MB

english, 2014

10

[IEEE 2009 6th IEEE International Conference on Group IV Photonics (GFP) - San Francisco, CA, USA (2009.09.9-2009.09.11)] 2009 6th IEEE International Conference on Group IV Photonics - Tensile-strain and n-type doping of germanium-on-insulator : Towards a Ge laser

Kurdi, M. El, Ngo, T.-P., Checoury, X., Sauvage, S., Fishman, G., Kociniewski, T., Debarre, D., Boulmer, J., Boucaud, P., Damlencourt, J. F., Kermarrec, O., Bensahel, D., Jakomin, R., Sagnes, I.

Year:

2009

Language:

english

File:

PDF, 421 KB

english, 2009

11

Temperature mapping by μ-Raman spectroscopy over cross-section area of power diode in forward biased conditions

Kociniewski, T., Moussodji, J., Khatir, Z.

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 932 KB

english, 2015

12

Quantitative analysis of electronic absorption of phosphorus donors in diamond

Stenger, I., Pinault-Thaury, M.-A., Lusson, A., Kociniewski, T., Jomard, F., Chevallier, J., Barjon, J.

Journal:

Diamond and Related Materials

Year:

2017

Language:

english

File:

PDF, 691 KB

english, 2017

13

Thermal mapping at the cell level of chips in power modules through the silicone gel using thermoreflectance

Metayrek, Y., Kociniewski, T., Khatir, Z.

Journal:

Microelectronics Reliability

Year:

2020

File:

PDF, 3.44 MB

2020

14

The n-type doping of diamond: Present status and pending questions

M.-A. Pinault, J. Barjon, T. Kociniewski, F. Jomard, J. Chevallier

Journal:

Physica B: Condensed Matter

Year:

2007

Language:

english

File:

PDF, 434 KB

english, 2007

15

Shallow donor induced n-type conductivity in deuterated boron-doped diamond

J. Chevallier, Z. Teukam, C. Saguy, R. Kalish, C. Cytermann, F. Jomard, M. Barbé, T. Kociniewski, J. E. Butler, C. Baron, A. Deneuville

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 127 KB

english, 2004

16

Silicon incorporation in CVD diamond layers

J. Barjon, E. Rzepka, F. Jomard, J.-M. Laroche, D. Ballutaud, T. Kociniewski, J. Chevallier

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 161 KB

english, 2005

17

Improvement of the electrical properties of compensated phosphorus-doped diamond by high temperature annealing

J. Chevallier, C. Saguy, M. Barbé, F. Jomard, D. Ballutaud, T. Kociniewski, B. Philosoph, B. Fizgeer, S. Koizumi

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 225 KB

english, 2005

18

n-type CVD diamond doped with phosphorus using the MOCVD technology for dopant incorporation

T. Kociniewski, J. Barjon, M.-A. Pinault, F. Jomard, A. Lusson, D. Ballutaud, O. Gorochov, J. M. Laroche, E. Rzepka, J. Chevallier, C. Saguy

Journal:

physica status solidi (a)

Year:

2006

Language:

english

File:

PDF, 294 KB

english, 2006

19

Cathodoluminescence as a tool to determine the phosphorus concentration in diamond

J. Barjon, M.-A. Pinault, T. Kociniewski, F. Jomard, J. Chevallier

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 151 KB

english, 2007

20

Pseudomorphic and relaxed SiGe/Si(001) layer synthesis by gas immersion laser doping (GILD)

Thierry Kociniewski, Frédéric Fossard, Jean-Luc Perrossier, Dominique Débarre, Jacques Boulmer

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 195 KB

english, 2011

21

The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at.%

Christiane Dubois, Gilles Prudon, Jean-Claude Dupuy, Brice Gautier, Bruno Canut, Yann Le Gall, Thierry Kociniewski

Journal:

Surface and Interface Analysis

Year:

2011

Language:

english

File:

PDF, 321 KB

english, 2011

22

New Investigation Possibilities on Forward Biased Power Devices Using Cross Sections

Kociniewski, T., Moussodji, J., Khatir, Z., Berkani, M., Lefebvre, S., Azzopardi, S.

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 374 KB

english, 2012

23

Nanoscale concentration and strain distribution in pseudomorphic films Si1−xGex/Si processed by pulsed laser induced epitaxy

L. Vincent, F. Fossard, T. Kociniewski, L. Largeau, N. Cherkashin, M.J. Hÿtch, D. Debarre, T. Sauvage, A. Claverie, J. Boulmer, D. Bouchier

Journal:

Applied Surface Science

Year:

2012

Language:

english

File:

PDF, 445 KB

english, 2012

24

Optical and electrical properties of laser doped Si:B in the alloy range

A. Bhaduri, T. Kociniewski, F. Fossard, J. Boulmer, D. Débarre

Journal:

Applied Surface Science

Year:

2012

Language:

english

File:

PDF, 780 KB

english, 2012

25

Enhanced photoluminescence of heavily n-doped germanium

El Kurdi, M., Kociniewski, T., Ngo, T.-P., Boulmer, J., DeÌbarre, D., Boucaud, P., Damlencourt, J. F., Kermarrec, O., Bensahel, D.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 496 KB

english, 2009

26

Formation of deuterium-related shallow donors in boron-doped diamond.

Chevallier, Jacques, Teukam, Zéphirin, Saguy, Cécile, Kalish, Rafi, Cytermann, Catherine, Bailly, Francis, Jomard, Frančois, Kociniewski, Thierry, Ballutaud, Dominique, Barbé, Michel, Butler, James E.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 668 KB

english, 2004

27

Impurity-to-band activation energy in phosphorus doped diamond

Stenger, I., Pinault-Thaury, M.-A., Kociniewski, T., Lusson, A., Chikoidze, E., Jomard, F., Dumont, Y., Chevallier, J., Barjon, J.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 835 KB

english, 2013

28

Conversion of p-type to n-type diamond by exposure to a deuterium plasma

Kalish, R., Saguy, C., Cytermann, C., Chevallier, J., Teukam, Z., Jomard, F., Kociniewski, T., Ballutaud, D., Butler, J. E., Baron, C., Deneuville, A.

Journal:

Journal of Applied Physics

Year:

2004

Language:

english

File:

PDF, 260 KB

english, 2004

29

[IEEE 2007 International Workshop on Physics of Semiconductor Devices - Mumbai, India (2007.12.16-2007.12.20)] 2007 International Workshop on Physics of Semiconductor Devices - Different approaches for the n-type doping of diamond

Chevallier, J., Pinault, M. -A., Barjon, J., Kociniewski, T., Jomard, F., Saguy, C., Kalish, R.

Year:

2007

Language:

english

File:

PDF, 155 KB

english, 2007

30

Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers

Dahlem, F., Kociniewski, T., Marcenat, C., Grockowiak, A., Pascal, L. M. A., Achatz, P., Boulmer, J., Débarre, D., Klein, T., Bustarret, E., Courtois, H.

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 190 KB

english, 2010

31

Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Marcenat, C., Kačmarčík, J., Piquerel, R., Achatz, P., Prudon, G., Dubois, C., Gautier, B., Dupuy, J. C., Bustarret, E., Ortega, L., Klein, T., Boulmer, J., Kociniewski, T., Débarre, D.

Journal:

Physical Review B

Year:

2010

Language:

english

File:

PDF, 407 KB

english, 2010

32

Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers

Grockowiak, A., Klein, T., Cercellier, H., Lévy-Bertrand, F., Blase, X., Kačmarčik, J., Kociniewski, T., Chiodi, F., Débarre, D., Prudon, G., Dubois, C., Marcenat, C.

Journal:

Physical Review B

Year:

2013

Language:

english

File:

PDF, 505 KB

english, 2013

33

Determination of the phosphorus content in diamond using cathodoluminescence spectroscopy

J. Barjon, P. Desfonds, M. Pinault, T. Kociniewski, F. Jomard, J. Chevallier

Year:

2007

Language:

english

File:

PDF, 438 KB

english, 2007

34

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

Hoummada, K., Dahlem, F., Kociniewski, T., Boulmer, J., Dubois, C., Prudon, G., Bustarret, E., Courtois, H., Débarre, D., Mangelinck, D.

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 1005 KB

english, 2012

35

[IEEE 2013 15th European Conference on Power Electronics and Applications (EPE) - Lille, France (2013.09.2-2013.09.6)] 2013 15th European Conference on Power Electronics and Applications (EPE) - Top-metal ageing effects on electro-thermal distributions in an IGBT chip under short circuit conditions

Moussodji, J., Kociniewski, T., Khatir, Z.

Year:

2013

Language:

english

File:

PDF, 1.12 MB

english, 2013

36

Some Recent Advances on the n-Type Doping of Diamond

Chevallier, Jacques, Kociniewski, T., Saguy, Cecile, Kalish, R., Cytermann, C., Barbé, M., Ballutaud, D., Jomard, François, Deneuville, A., Baron, C., Butler, J.E., Koizumi, Satoshi

Journal:

Solid State Phenomena

Year:

2005

Language:

english

File:

PDF, 289 KB

english, 2005

37

Superconducting properties of laser annealed implanted Si:B epilayers

Grockowiak, A, Klein, T, Bustarret, E, Kačmarčík, J, Dubois, C, Prudon, G, Hoummada, K, Mangelinck, D, Kociniewski, T, Débarre, D, Boulmer, J, Marcenat, C

Journal:

Superconductor Science and Technology

Year:

2013

Language:

english

File:

PDF, 1001 KB

english, 2013

38

[IEEE 2015 17th European Conference on Power Electronics and Applications (EPE '15 ECCE Europe) - Geneva, Switzerland (2015.9.8-2015.9.10)] 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) - Temperature and strain mappings over forward biased power IGBT cross-section area by μ-Raman spectroscopy

Kociniewski, T., Khatir, Z.

Year:

2015

Language:

english

File:

PDF, 838 KB

english, 2015

39

[IEEE 2020 36th Semiconductor Thermal Measurement, Modeling & Management Symposium (SEMI-THERM) - San Jose, CA, USA (2020.3.16-2020.3.20)] 2020 36th Semiconductor Thermal Measurement, Modeling & Management Symposium (SEMI-THERM) - Cross Correlation Method for Images Alignment: Application to 4 Buckets Calculation in Thermoreflectance

Youssef, Metayrek, Thierry, Kociniewski, Zoubir, Khatir

Year:

2020

File:

PDF, 1.82 MB

2020